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           Beijing Century Goldray Semiconductor Co., Ltd. (hereinafter referred to as the "Goldray Century") was established on December 24, 2010, the registered capital of 23656 million yuan, located in the Beijing Economic and Technological Development Zone, founded in 1970.

         After 40 years of development, the company has become the second and three generation semiconductor materials, epitaxy, devices, modules of R & D, design, production and sales of scientific and technological enterprise. It is also the first domestic throughout the whole industry chain of silicon carbide: silicon carbide high purity powder ,single crystal materials, epitaxial materials, devices and power module.

         Company's main products for silicon carbide (SiC) high purity powder, silicon carbide (SiC) wafers , indium phosphide (InP) wafers, gallium antimonide (GaSb) wafers, silicon carbide (SiC SiC) homoepitaxial , gallium nitride( SiC-GaN )epitaxial , silicon carbide (SiC) SBD devices, silicon carbide (SiC) MOSFET devices, silicon carbide (SiC) power module ect.

         The company has a strong technical R & D team, strong R & D strength. Since its establishment, that it has been assumed more than 50 national scientific projects of which 8 major national science and technology projects, accessing to more than one hundred patents authorized.

         Century goldray is a modernized enterprise as a dynamic, willing to work with friends at home and abroad extensive cooperation, working together to create a brilliant future of the semiconductor industry.


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