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6 Inch SiC Wafer
    A wide energy bandgap,high thermal conductivity,tigh saturated electrondrift velocities,and high break-down electric field make silicon carbide(SiC) a candidate of choice for high-temperature,high-speed,high-frequency,and high-power applications.SiC based devices are highly expected for the spacecraft,space probe,oil exploration,optical storage,display and power management and distributions.
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4 Inch SiC Wafer
    A wide energy bandgap,high thermal conductivity,tigh saturated electrondrift velocities,and high break-down electric field make silicon carbide(SiC) a candidate of choice for high-temperature,high-speed,high-frequency,and high-power applications.SiC based devices are highly expected for the spacecraft,space probe,oil exploration,optical storage,display and power management and distributions.
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3 Inch SiC Wafer
    A wide energy bandgap,high thermal conductivity,tigh saturated electrondrift velocities,and high break-down electric field make silicon carbide(SiC) a candidate of choice for high-temperature,high-speed,high-frequency,and high-power applications.SiC based devices are highly expected for the spacecraft,space probe,oil exploration,optical storage,display and power management and distributions.
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2 Inch SiC Wafer
    A wide energy bandgap,high thermal conductivity,tigh saturated electrondrift velocities,and high break-down electric field make silicon carbide(SiC) a candidate of choice for high-temperature,high-speed,high-frequency,and high-power applications.SiC based devices are highly expected for the spacecraft,space probe,oil exploration,optical storage,display and power management and distributions.
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High-Purity SiC Power
     The high purity silicon carbide (SiC) powders are synthesized through high temperature solid state reaction with high purity silicon and carbon powders.The contents of nitrogen,boron,aluminum are extremely low and the powder purity is 99.999wt%.The powders are used to grow the high purity semi-insulating SiC crystal ingots.
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