10月24日，由SEMI(国际半导体设备与材料协会)中国主办，南昌高新区企业中微半导体设备公司承办的化合物半导体制程设备及技术研讨会在南昌举行，南昌市发改委副主任钟坚、南昌市科技局副局长黄端伟、高新区管委会副调研员杨磊出席会议。

作为业内专业性极强的学术会议，本次研讨会邀请了国内半导体行业众多知名企业家和专家学者，重点探讨化合物半导体领域SiC器件、GaN功率电子、MicroLED显示最新技术进展，以及核心制程设备对于新技术快速发展过程中所面临的挑战。北京世纪金光半导体有限公司有幸受邀首次参加研讨会，并以“Next Generation SiC Power Device Design, Fabrication Technology and Trends”为题，与业内学者共同探讨第三代半导体碳化硅技术的应用与发展。

近年来，随着以碳化硅(SiC)、氮化镓(GaN)为主的第三代化合物半导体新材料陆续应用在二极管、金属氧化物场效应晶体管、高电子迁移率晶体管等器件上，新技术革命的序幕已经拉开，高成长性的应用市场雏形已经初现。作为全球性战略材料的制高点，碳化硅功率器件因其耐高压、低损耗、高效率等特性，在高温、高频、大功率、光电子以及抗辐射等方面具有巨大的应用潜力。除了民用领域外，在航天、军工、核能等极端环境应用有着不可替代的优势。

Abstract：Silicon Carbide (SiC) is an attractive material for power semiconductor devices due to its high thermal conductivity, high saturated drift velocity, and high breakdown electric field. SiC power devices, such as SiC SBDs, MOSFETs and JFETs, have been commercialized With a wide range of applications including power supplies, electric vehicles, industrial equipment, and electrical appliances. Pursuing lower cost, less conduction loss and higher performance, new device designs  are being hotly discussing and researching, including trench device, floating junction device , super junction device and trench super junction device. Especially for SiC SBD and MOSFET, trench structures are the main develop trends for the next generation design. Those new designs raise more requirements and challenges for the fabrication technology. CENGOL has developed several novel SBD and MOSFET designs, fabrication process and prototypes, promising to improve the process cost and device performance.

Key words: SiC; SBD; MOSFET;Trench Device;Fabrication Process